DIODES DMG3401LSNQ-13

DIODES · FETs & Power MOSFETs · MPN DMG3401LSNQ-13

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)25.1nC@10V
Current - Continuous Drain(Id)3.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation800mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)50mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.326nF

Technical details

30V 3.7A 1.3V 800mW 50mΩ@10V 1 P-Channel SC-59-3 Single FETs, MOSFETs RoHS

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