DIODES DMG3401LSN-7

DIODES · FETs & Power MOSFETs · MPN DMG3401LSN-7

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Specifications

Gate Charge(Qg)25.1nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)3.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)71pF
RDS(on)85mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)1.326nF
TypeP-Channel

Technical details

P-Channel 30V 3.7A 1.2W Surface Mount SOT-23

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