DIODES DMG1029SVQ-7

DIODES · FETs & Power MOSFETs · MPN DMG1029SVQ-7

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Specifications

Current - Continuous Drain(Id)500mA;360mA
RDS(on)1.7Ω@10V;3Ω@4.5V;4Ω@10V;6Ω@4.5V
Pd - Power Dissipation450mW;1W
Gate Threshold Voltage (Vgs(th))1V;3V
Drain to Source Voltage60V;60V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)2.9pF;2.7pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)30pF;25pF
Gate Charge(Qg)300pC@4.5V;280pC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)4.2pF;4.7pF

Technical details

N-Channel+P-Channel 60V 500mA 450mW Surface Mount SOT-563

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