DIODES DMG1029SV-7

DIODES · FETs & Power MOSFETs · MPN DMG1029SV-7

No reviews yet — be the first to review DIODES DMG1029SV-7.

Specifications

Current - Continuous Drain(Id)500mA;360mA
RDS(on)1.7Ω@10V
Pd - Power Dissipation450mW
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
Reverse Transfer Capacitance (Crss@Vds)-
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)30pF
Gate Charge(Qg)300pC@4.5V
Operating Temperature-55℃~+150℃

Technical details

N-Channel+P-Channel Array 60V 500mA 360mA 450mW Surface Mount SOT-563

Related FETs & Power MOSFETs