DIODES · FETs & Power MOSFETs · MPN DMG1026UVQ-7
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| Current - Continuous Drain(Id) | 440mA |
|---|---|
| Pd - Power Dissipation | 580mW |
| RDS(on) | 1.8Ω@10V |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 32pF |
| Gate Charge(Qg) | 0.45pC |
| Operating Temperature | -55℃~+150℃ |
440mA 580mW 1.8Ω@10V 1.8V 2 N-Channel SOT-563 FET, MOSFET Arrays RoHS