DIODES · FETs & Power MOSFETs · MPN DMG1016VQ-13
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| Current - Continuous Drain(Id) | 870mA;640mA |
|---|---|
| Pd - Power Dissipation | 530mW |
| RDS(on) | 400mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 20V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 60.67pF |
| Gate Charge(Qg) | 740pC@4.5V |
| Operating Temperature | -55℃~+150℃ |
530mW 400mΩ@4.5V 1V 1 N-Channel + 1 P-Channel SOT-563 FET, MOSFET Arrays RoHS