DIODES DMG1016V-7

DIODES · FETs & Power MOSFETs · MPN DMG1016V-7

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Specifications

ConfigurationCommon source
Current - Continuous Drain(Id)870mA
RDS(on)900mΩ@4.5V
Pd - Power Dissipation530mW
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)6.36pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)60.67pF
Gate Charge(Qg)736.6pC@4.5V
Operating Temperature-55℃~+150℃

Technical details

N-Channel+P-Channel Array 20V 870mA 530mW Surface Mount SOT-563

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