DIODES DMG1016UDW-7

DIODES · FETs & Power MOSFETs · MPN DMG1016UDW-7

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Specifications

Current - Continuous Drain(Id)1.066A
RDS(on)750mΩ@4.5V
Pd - Power Dissipation330mW
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)60.67pF
Gate Charge(Qg)736.6nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

N-Channel+P-Channel Array 20V 1066mA 330mW Surface Mount SOT-363

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