DIODES DMG1013UWQ-13

DIODES · FETs & Power MOSFETs · MPN DMG1013UWQ-13

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Specifications

Gate Charge(Qg)622.4pC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)820mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))500mV
Pd - Power Dissipation310mW
Reverse Transfer Capacitance (Crss@Vds)6.36pF
RDS(on)700mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)59.76pF

Technical details

P-Channel 20V 0.82A 0.31W Surface Mount SOT-323

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