DIODES · FETs & Power MOSFETs · MPN DMG1012UWQ-7
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| Gate Charge(Qg) | 736.6pC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 640mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 290mW |
| Reverse Transfer Capacitance (Crss@Vds) | 5.37pF |
| RDS(on) | 400mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
20V 640mA 1V 290mW 400mΩ@2.5V 1 N-channel SOT-323 Single FETs, MOSFETs RoHS