DIODES DMG1012UW

DIODES · FETs & Power MOSFETs · MPN DMG1012UW

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Specifications

Gate Charge(Qg)736.6pC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)640mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation290mW
Reverse Transfer Capacitance (Crss@Vds)5.37pF
RDS(on)400mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)67pF

Technical details

N-Channel 20V 0.64A 0.29W Surface Mount SOT-323

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