DIODES DMG1012T-13

DIODES · FETs & Power MOSFETs · MPN DMG1012T-13

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Specifications

Gate Charge(Qg)736.6pC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)9.68pF
Current - Continuous Drain(Id)630mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation280mW
Reverse Transfer Capacitance (Crss@Vds)5.37pF
RDS(on)700mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)60.67pF

Technical details

N-Channel 20V 0.63A 0.28W Surface Mount SOT-523

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