DIODES · FETs & Power MOSFETs · MPN DMC67D8UFDBQ-13
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| Current - Continuous Drain(Id) | 2.9A |
|---|---|
| Pd - Power Dissipation | 890mW |
| RDS(on) | 4.2Ω@4V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 60V;20V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 101pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 443pF |
| Gate Charge(Qg) | 7.3nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 128pF |
2.9A 890mW 4.2Ω@4V 2.5V 1 N-Channel + 1 P-Channel UDFN2020-6 FET, MOSFET Arrays RoHS