DIODES DMC6070LND-13

DIODES · FETs & Power MOSFETs · MPN DMC6070LND-13

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Specifications

Current - Continuous Drain(Id)3.1A
RDS(on)250mΩ@4.5V
Pd - Power Dissipation1.4W
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage60V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)26pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)731pF
Gate Charge(Qg)11.5nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)36pF

Technical details

3.1A 250mΩ@4.5V 1.4W 3V 1 N-Channel + 1 P-Channel PowerDI3333-8 FET, MOSFET Arrays RoHS

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