DIODES DMC3730UVT-13

DIODES · FETs & Power MOSFETs · MPN DMC3730UVT-13

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Specifications

Current - Continuous Drain(Id)680mA
Pd - Power Dissipation900mW
RDS(on)450mΩ@4.5V;1.1Ω@4.5V
Gate Threshold Voltage (Vgs(th))1.1V
Drain to Source Voltage25V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)10pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)63pF
Gate Charge(Qg)1.64nC@4.5V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)34pF

Technical details

680mA 900mW 1.1V 1 N-Channel + 1 P-Channel TSOT-26 FET, MOSFET Arrays RoHS

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