DIODES DMC3061SVTQ-13

DIODES · FETs & Power MOSFETs · MPN DMC3061SVTQ-13

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Specifications

Current - Continuous Drain(Id)3.4A
Pd - Power Dissipation1.08W
RDS(on)140mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.2V
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)30pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)287pF
Gate Charge(Qg)6.8nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)44pF

Technical details

3.4A 1.08W 140mΩ@4.5V 2.2V 1 N-Channel + 1 P-Channel TSOT-26 FET, MOSFET Arrays RoHS

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