DIODES DMC3060LVTQ-13

DIODES · FETs & Power MOSFETs · MPN DMC3060LVTQ-13

No reviews yet — be the first to review DIODES DMC3060LVTQ-13.

Specifications

Current - Continuous Drain(Id)3.6A
Pd - Power Dissipation1.6W
RDS(on)-
Gate Threshold Voltage (Vgs(th))-
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)-
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)-

Technical details

3.6A 1.6W 1 N-Channel + 1 P-Channel TSOT-26 FET, MOSFET Arrays RoHS

Related FETs & Power MOSFETs