DIODES DMC3060LVT-13

DIODES · FETs & Power MOSFETs · MPN DMC3060LVT-13

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Specifications

Current - Continuous Drain(Id)3.6A
Pd - Power Dissipation1.16W
RDS(on)-
Gate Threshold Voltage (Vgs(th))-
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)39pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)395pF
Gate Charge(Qg)11.3nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)-

Technical details

3.6A 1.16W 1 N-Channel + 1 P-Channel TSOT-23-6 FET, MOSFET Arrays RoHS

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