DIODES DMC3016LSD-13

DIODES · FETs & Power MOSFETs · MPN DMC3016LSD-13

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Specifications

Current - Continuous Drain(Id)8.2A
RDS(on)38mΩ@4.5V
Pd - Power Dissipation1.6W
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)110pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.415nF
Gate Charge(Qg)25.1nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)147pF

Technical details

8.2A 38mΩ@4.5V 1.6W 3V 1 N-Channel + 1 P-Channel SO-8 FET, MOSFET Arrays RoHS

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