DIODES DMC2710UVT-13

DIODES · FETs & Power MOSFETs · MPN DMC2710UVT-13

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Specifications

Current - Continuous Drain(Id)-
Pd - Power Dissipation800mW
RDS(on)-
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)6.5pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)49pF
Gate Charge(Qg)700pC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)13pF

Technical details

800mW 1V 1 N-Channel + 1 P-Channel TSOT-23-6 FET, MOSFET Arrays RoHS

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