DIODES DMC25D1UVT-13

DIODES · FETs & Power MOSFETs · MPN DMC25D1UVT-13

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Specifications

Current - Continuous Drain(Id)3.9A
Pd - Power Dissipation1.3W
RDS(on)4Ω@4.5V
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage25V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)3.3pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)393pF
Gate Charge(Qg)24.5nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)393pF

Technical details

3.9A 1.3W 4Ω@4.5V 1.5V 1 N-Channel + 1 P-Channel TSOT-26 FET, MOSFET Arrays RoHS

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