DIODES DMC2057UVT-13

DIODES · FETs & Power MOSFETs · MPN DMC2057UVT-13

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Specifications

Current - Continuous Drain(Id)4A
Pd - Power Dissipation1.1W
RDS(on)100mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1.2V
Drain to Source Voltage20V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)69pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)536pF
Gate Charge(Qg)10.5nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)78pF

Technical details

4A 1.1W 100mΩ@4.5V 1.2V 1 N-Channel + 1 P-Channel TSOT-26 FET, MOSFET Arrays RoHS

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