DIODES DMC2020USD-13

DIODES · FETs & Power MOSFETs · MPN DMC2020USD-13

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Specifications

Current - Continuous Drain(Id)8.5A;6.8A
RDS(on)13mΩ@4.5V;20mΩ@4.5V
Pd - Power Dissipation1.25W;1.8W
Gate Threshold Voltage (Vgs(th))1.1V;700mV
Drain to Source Voltage20V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)142pF;145pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.149nF;1.61nF
Gate Charge(Qg)11.6nC@4.5V;15.4nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)157pF

Technical details

N-Channel+P-Channel 20V 8.5A 1.8W Surface Mount SO-8

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