DIODES DMC10H220LSD-13

DIODES · FETs & Power MOSFETs · MPN DMC10H220LSD-13

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Specifications

Current - Continuous Drain(Id)1.7A
RDS(on)220mΩ@10V;250mΩ@10V
Pd - Power Dissipation1.5W
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage100V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.03nF
Gate Charge(Qg)17.5nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)-

Technical details

1.7A 1.5W 3V 1 N-Channel + 1 P-Channel SO-8 FET, MOSFET Arrays RoHS

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