DIODES DMC1030UFDBQ-7

DIODES · FETs & Power MOSFETs · MPN DMC1030UFDBQ-7

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Specifications

Current - Continuous Drain(Id)5.1A
RDS(on)34mΩ@4.5V
Pd - Power Dissipation1.89W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage12V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)254pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.028nF
Gate Charge(Qg)23.1nC@8V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)285pF

Technical details

N-Channel+P-Channel Array 12V 5.1A 1.89W Surface Mount UDFN2020-6

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