DIODES DMC1030UFDB-13

DIODES · FETs & Power MOSFETs · MPN DMC1030UFDB-13

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Specifications

Current - Continuous Drain(Id)5.1A
Pd - Power Dissipation1.89W
RDS(on)34mΩ@4.5V;59mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage12V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)254pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.028nF
Gate Charge(Qg)23.1nC@8V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)285pF

Technical details

5.1A 1.89W 1V 1 N-Channel + 1 P-Channel UDFN2020-6 FET, MOSFET Arrays RoHS

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