DIODES DMC1029UFDB-13

DIODES · FETs & Power MOSFETs · MPN DMC1029UFDB-13

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Specifications

Current - Continuous Drain(Id)5.6A
Pd - Power Dissipation1.4W
RDS(on)29mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage12V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)183pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)915pF
Gate Charge(Qg)19.6nC@8V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)225pF

Technical details

5.6A 1.4W 29mΩ@4.5V 1V 1 N-Channel + 1 P-Channel UDFN2020-6 FET, MOSFET Arrays RoHS

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