DIODES DI9405T

DIODES · FETs & Power MOSFETs · MPN DI9405T

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage20V
Current - Continuous Drain(Id)4.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W
RDS(on)160mΩ@4.5V

Technical details

20V 4.3A 3V 2.5W 160mΩ@4.5V Single FETs, MOSFETs RoHS

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