DIODES DI9400T

DIODES · FETs & Power MOSFETs · MPN DI9400T

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)-
Output Capacitance(Coss)260pF
Current - Continuous Drain(Id)3.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation2.5W
RDS(on)320mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)100pF
Input Capacitance(Ciss)350pF
Type-

Technical details

30V 3.4A 2.8V 2.5W 320mΩ@4.5V Single FETs, MOSFETs RoHS

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