DIODES DDTC143TE-7-F

DIODES · Transistors (BJTs) · MPN DDTC143TE-7-F

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Specifications

Current - Collector Cutoff0.5uA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
typeNPN
Number1 NPN (Pre-Biased)
Pd - Power Dissipation150mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 100mA 150mW Surface Mount SOT-523

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