DIODES DDTC123EE-7-F

DIODES · Transistors (BJTs) · MPN DDTC123EE-7-F

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain56
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV@10mA,500uA
typeNPN
Resistor Ratio1
Number1 NPN (Pre-Biased)
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)3V@20mA,300mV
Voltage - Input(Max)(VI(off))500mV

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 100mA 150mW Surface Mount SOT-523

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