DIODES DDC114EH-7

DIODES · Transistors (BJTs) · MPN DDC114EH-7

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Specifications

Transition frequency(fT)250MHz
DC Current Gain100
typeNPN
Output Voltage(VO(on))300mV@10mA,500uA
Resistor Ratio1
Number2 NPN (Pre-Biased)
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)1.9V
Voltage - Input(Max)(VI(off))1.9V
Current - Collector(Ic)50mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Technical details

Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 50mA 150mW Surface Mount SOT-563

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