DIODES · Transistors (BJTs) · MPN DDA123JU-7-F
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| Emitter-Base Voltage VEBO | 5V |
|---|---|
| DC Current Gain | 80 |
| Output Voltage(VO(on)) | 300mV |
| Resistor Ratio | - |
| Number | 2 PNP Pre-Biased Transistors |
| Pd - Power Dissipation | 200mW |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V |
| Voltage - Input(Max)(VI(off)) | 1.9V |
| Current - Collector(Ic) | 70mA |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ |
Pre-Biased Bipolar Transistor (BJT) 2 PNP Pre-Biased Transistors 50V 70mA 200mW Surface Mount SOT-363