DIODES DDA114YU-7-F

DIODES · Transistors (BJTs) · MPN DDA114YU-7-F

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Specifications

DC Current Gain68
Output Voltage(VO(on))300mV
Input Resistor10kΩ
Resistor Ratio4.7
Number2 PNP Pre-Biased Transistors
Pd - Power Dissipation200mW
Voltage - Input(Max)(VI(off))1.9V
Input Voltage (VI(on)@Ic,Vce)1.4V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Technical details

Pre-Biased Bipolar Transistor (BJT) 2 PNP Pre-Biased Transistors 50V 100mA 200mW Surface Mount SOT-363

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