DIODES DDA113TU-7-F

DIODES · Transistors (BJTs) · MPN DDA113TU-7-F

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Specifications

Current - Collector Cutoff0.5uA
Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO5V
DC Current Gain100
Output Voltage(VO(on))300mV
Input Resistor1kΩ
Resistor Ratio-
Pd - Power Dissipation200mW
Voltage - Input(Max)(VI(off))1.9V
Input Voltage (VI(on)@Ic,Vce)-
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-363

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