DIODES DCX115EK-7-F

DIODES · Transistors (BJTs) · MPN DCX115EK-7-F

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Specifications

Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO5V
DC Current Gain100
Output Voltage(VO(on))180mV
Input Resistor100kΩ
Resistor Ratio1
Pd - Power Dissipation300mW
Input Voltage (VI(on)@Ic,Vce)1.9V
Voltage - Input(Max)(VI(off))3V
Current - Collector(Ic)20mA
Collector - Emitter Voltage VCEO50V
typeNPN+PNP

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 300mW Surface Mount SOT-26

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