DIODES D-2N7002-7-F

DIODES · FETs & Power MOSFETs · MPN D-2N7002-7-F

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Specifications

Output Capacitance(Coss)11pF
Pd - Power Dissipation540mW
Gate Charge(Qg)223pC
Drain to Source Voltage60V
Configuration-
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)22pF

Technical details

540mW 60V 1V 5Ω@10V 1 N-channel N-Channel SOT-23-3 Single FETs, MOSFETs RoHS

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