DIODES BSS84Q-7-F

DIODES · FETs & Power MOSFETs · MPN BSS84Q-7-F

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Specifications

Gate Charge(Qg)280pC@4.5V;590pC@10V
Drain to Source Voltage50V
Output Capacitance(Coss)4.7pF
Current - Continuous Drain(Id)130mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation300mW
Reverse Transfer Capacitance (Crss@Vds)2.8pF
RDS(on)3.2Ω@5V
Number1 P-Channel
Input Capacitance(Ciss)24.6pF

Technical details

P-Channel 50V 130mA 300mW Surface Mount SOT-23

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