DIODES BSS8402DWQ-7

DIODES · FETs & Power MOSFETs · MPN BSS8402DWQ-7

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Specifications

Current - Continuous Drain(Id)115mA;130mA
Pd - Power Dissipation200mW
RDS(on)13.5Ω@10V;10Ω@5V
Gate Threshold Voltage (Vgs(th))2.5V;2V
Drain to Source Voltage60V;50V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)2pF;12pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)50pF
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)11pF;25pF

Technical details

P-Channel 200mW Surface Mount SOT-363

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