DIODES · FETs & Power MOSFETs · MPN BSS8402DWQ-13
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| Current - Continuous Drain(Id) | 130mA |
|---|---|
| RDS(on) | 13.5Ω@10V |
| Pd - Power Dissipation | 200mW |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 60V;50V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 50pF |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 25pF |
130mA 13.5Ω@10V 200mW 2.5V 1 N-Channel + 1 P-Channel SOT-363 FET, MOSFET Arrays RoHS