DIODES BSS8402DW-7-F

DIODES · FETs & Power MOSFETs · MPN BSS8402DW-7-F

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Specifications

Current - Continuous Drain(Id)130mA
RDS(on)13.5Ω@10V
Pd - Power Dissipation200mW
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)50pF
Gate Charge(Qg)-
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)25pF

Technical details

N-Channel+P-Channel Array 60V 130mA 200mW Surface Mount SOT-363

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