DIODES BSS123Q-7

DIODES · FETs & Power MOSFETs · MPN BSS123Q-7

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Specifications

Drain to Source Voltage100V
Current - Continuous Drain(Id)170mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation300mW
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)60pF

Technical details

N-Channel 100V 0.17A 300mW Surface Mount SOT-23

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