DIODES BSS123-13-F

DIODES · FETs & Power MOSFETs · MPN BSS123-13-F

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Specifications

Drain to Source Voltage100V
Output Capacitance(Coss)3.5pF
Current - Continuous Drain(Id)170mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation300mW
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)3.8Ω@45V
Number1 N-channel
Input Capacitance(Ciss)22pF
TypeN-Channel

Technical details

100V 170mA 1.4V 300mW 3.8Ω@45V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS

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