DIODES BSN20Q-7

DIODES · FETs & Power MOSFETs · MPN BSN20Q-7

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Specifications

Drain to Source Voltage50V
Gate Charge(Qg)800pC@10V
Current - Continuous Drain(Id)500mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation600mW;920mW
RDS(on)1.3Ω@10V
Reverse Transfer Capacitance (Crss@Vds)3.3pF
Number1 N-channel
Input Capacitance(Ciss)40pF

Technical details

50V 500mA 1.5V 1.3Ω@10V 1 N-channel SOT-23-3 Single FETs, MOSFETs RoHS

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