DIODES BSN20-7

DIODES · FETs & Power MOSFETs · MPN BSN20-7

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Specifications

Gate Charge(Qg)800pC@10V
Drain to Source Voltage50V
Output Capacitance(Coss)15pF
Current - Continuous Drain(Id)500mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation600mW
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)2Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)40pF
TypeN-Channel

Technical details

N-Channel 50V 500mA 600mW Surface Mount SOT-23

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