DIODES BS250P

DIODES · FETs & Power MOSFETs · MPN BS250P

No reviews yet — be the first to review DIODES BS250P.

Specifications

Gate Charge(Qg)-
Drain to Source Voltage45V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)230mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation700mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)14Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)60pF
TypeP-Channel

Technical details

P-Channel 45V 230mA 700mW Through Hole TO-92L-3

Related FETs & Power MOSFETs