DIODES BS170P

DIODES · FETs & Power MOSFETs · MPN BS170P

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Specifications

Drain to Source Voltage60V
Current - Continuous Drain(Id)270mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation625mW
RDS(on)5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)60pF
TypeN-Channel

Technical details

N-Channel 60V 270mA 625mW Through Hole TO-92

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