DIODES BS107P

DIODES · FETs & Power MOSFETs · MPN BS107P

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage200V
Output Capacitance(Coss)20pF
Current - Continuous Drain(Id)120mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)15Ω@2.6V;30Ω@5V
Number1 N-channel
Input Capacitance(Ciss)85pF
TypeN-Channel

Technical details

N-Channel 200V 120mA 500mW Through Hole TO-92

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