DIODES BFS17NTA

DIODES · Transistors (BJTs) · MPN BFS17NTA

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Specifications

Emitter-Base Voltage(Vebo)3V
Current - Collector Cutoff500nA
Collector - Emitter Voltage VCEO11V
DC Current Gain56
Pd - Power Dissipation310mW
Operating Temperature-55℃~+150℃
Current - Collector(Ic)50mA
Transition frequency(fT)3.2GHz
Vce Saturation(VCE(sat))500mV
typeNPN
Number1 NPN

Technical details

Bipolar (BJT) Transistor NPN 11V 50mA 3.2GHz 310mW Surface Mount SOT-23

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