DIODES BFS17NQTA

DIODES · Transistors (BJTs) · MPN BFS17NQTA

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Specifications

Emitter-Base Voltage(Vebo)3V
Current - Collector Cutoff500nA
Collector - Emitter Voltage VCEO11V
DC Current Gain56
Pd - Power Dissipation310mW
Current - Collector(Ic)50mA
Transition frequency(fT)3.2GHz
typeNPN
Number1 NPN

Technical details

11V 56 310mW 50mA NPN SOT-23-3 Bipolar RF Transistors RoHS

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